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| 2SK3175A Silicon N Channel MOS FET UHF Power Amplifier ADE-208-1452 (Z) 1st. Edition September 2001 Features * High power output, High gain, High efficiency P1dB = 110 W, PG = 16.0 dB, D = 60 % (at P1dB) typ. (f = 860MHz) * Compact package Outline RFPAK-G 3 D 2 G 1 1. Drain 2. Source 3. Gate S This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested. In AC testing , the part should be mounted on heat sink with thermal compound. 2SK3175A Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID ID(pulse) Pch Tch Tstg Note2 Note3 Note1 Ratings 60 10 8 16 126 175 -55 to +150 Unit V V A A W C C 1. Pin = 0 , PW 0.1 sec 2. PW 10 ms, duty cycle 50 % 3. Value at Tc = 25C Electrical Characteristics (Tc = 25C) Item Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Output Power Symbol IDSS IGSS VGS(off) Min -- -- 1.0 4.0 -- -- 100 Typ -- -- 2.2 6.7 165 4 135 Max 1 3 3.0 -- -- -- -- Unit mA A V S pF pF W Test Conditions VDS = 60 V, VGS = 0 VGS = 10V, VDS = 0 ID = 1mA, VDS = 10V VDS=10V, ID = 5A Note4 VGS = 5V, VDS = 0 f = 1MHz VDG = 10V, VGS = 0 f = 1MHz VDS = 28V, IDQ = 0.6A f = 860 MHz Pin = 7 W VDS = 28V, IDQ = 0.6A f = 860 MHz Pin = 7 W |yfs| Ciss Crss Pout Drain Rational D -- 65 -- % Note: 4. Pulse Test Rev.0, Aug. 2001, page 2 of 8 2SK3175A Main Characteristics Power vs. Temperature Derating 200 Pch (W) I D (A) Maximum Safe Operation Area 50 150 20 DC 10 5 2 1 0.5 O pe Channel Dissipation Drain Current ra tio 100 n (T c = C 25 ) 50 0 50 100 150 Tc (C) 200 1 Case Temperature 10 20 50 100 2 5 Drain to Source Voltage V DS (V) Typical Output Characteristics 20 10 V 8V 6V I D (A) I D (A) Typical Transfer Characteristics 20 V DS = 10 V Pulse Test 16 16 5V 12 Pulse Test 8 4V 4 VGS = 3 V 0 2 4 6 Drain to Source Voltage 8 10 V DS (V) 12 Drain Current Drain Current 8 4 0 1 2 3 4 Gate to Source Voltage 5 6 V GS (V) Rev.0, Aug. 2001, page 3 of 8 2SK3175A Forward Transfer Admittance vs. Drain Current Drain to Source Saturatioin Voltage vs. Drain Current 5 2 1 0.5 0.2 0.1 Forward Transfer Admittance |y fs | (S) 10 5 2 1 0.5 0.2 0.1 0.1 0.2 V DS = 10 V Pulse Test 5 10 1 2 Drain Current I D (A) 0.5 20 Drain to Source Saturation Voltage V DS(on) (V) 0.05 0.02 0.01 0.1 0.2 VGS = 10 V Pulse Test 5 10 20 0.5 1 2 Drain Current I D (A) 50 Gate to Source Cutoff Voltage vs. Ambient Temperature Input Capacitance vs. Gate to Source Voltage 170 Gate to Source Cutoff Voltage V GS(off) (V) 3.6 Input Capacitance Ciss (pF) 3.2 1A 165 160 155 150 145 140 -10 V DS = 0 f = 1 MHz -6 -2 2 6 10 2.8 100 mA 2.4 10 mA ID = 1 2.0 V DS = 10 V 1.6 - 25 0 25 50 75 mA 100 Ta (C) 125 Ambient Temperature Gate to Source Voltage VGS (V) Rev.0, Aug. 2001, page 4 of 8 2SK3175A Reverse Transfer Capacitance Crss (pF) Output Capacitance vs. Drain to Source Voltage 1000 Output Capacitance Coss (pF) Reverse Transfer Capacitance vs. Drain to Gate Voltage 100 50 20 10 5 2 1 1 V GS = 0 f = 1 MHz 500 200 100 50 20 10 1 V GS = 0 f = 1 MHz 2 5 10 20 50 100 2 5 10 20 50 100 Drain to Source Voltage V DS (V) Drain to Gate Voltege V DG (V) 160 Output Power, Drain Rational vs. Input Power Pout Drain Rational vs. Output Power 80 80 Output Power Pout (W) Drain Rational D (%) 120 D Drain Rational D (%) 60 60 80 40 40 40 V DS = 28 V I DQ = 0.6 A f = 860 MHz 1 2 3 4 5 6 7 20 20 V DS = 28 V I DQ = 0.6 A f = 860 MHz 0 25 50 75 100 125 150 0 0 0 0 Output Power Pout (W) Input power Pin (W) Rev.0, Aug. 2001, page 5 of 8 2SK3175A Output Power, Drain Rational vs. Frequency 140 Pout D 70 60 100 Inter Modulation vs. Total Output Power IMD (dBc) Output Power Pout (W) 120 100 80 60 40 20 V DS = 28 V I DQ = 0.6 A Pin = 7 W 840 850 860 870 880 Frequency f (MHz) 90 80 70 50 40 30 20 10 0 890 Drain Rational D (%) VDS = 28 V IDQ =0.6A fc = 860 MHz f=1MHz IM7H IM5L IM3H IM7L Inter Modulation 60 50 40 30 20 30 34 38 IM5H IM3L 0 830 42 46 50 Total Output Power Pout-total (dBm) Rev.0, Aug. 2001, page 6 of 8 2SK3175A Package Dimensions As of July, 2001 Unit: mm 16.8 0.5 C1.0 15.6 0.3 (0.5) 3.2 0.3 12.8 0.3 2-R1.6 9.6 0.3 22.8 0.5 26.0 0.5 (0.1) 2.5 0.3 3.14 0.3 4.14 0.3 15.4 0.3 11.7 1.0 5.67 0.5 Hitachi Code JEDEC JEITA Mass (reference value) RFPAK-G - - 11.0 g Rev.0, Aug. 2001, page 7 of 8 2SK3175A Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109 URL http://www.hitachisemiconductor.com/ For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen Postfach 201, D-85619 Feldkirchen Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://semiconductor.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk Copyright (c) Hitachi, Ltd., 2001. All rights reserved. Printed in Japan. Colophon 5.0 Rev.0, Aug. 2001, page 8 of 8 |
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